利用微机电系统(MEMS)表面微加工技术设计并制作了一种应用于无线电引信射频前端的CMOS兼容高Q值悬浮片上螺旋电感。电感的制作工艺在热预算和材料选择上均具有良好的CMOS兼容特性。通过采用铜金属悬浮线圈结构减小了片上螺旋电感损耗因素,显著提高了片上螺旋电感Q值。采用电磁场有限元分析软件HFSS对该电感模型进行了仿真研究,完成了悬浮片上螺旋电感的制备并进行了测量。测量结果表明:所设计的CMOS兼容MEMS悬浮片上螺旋电感Q值在1~7.6GHz测量频段均大于20,在7.4 GHz频段最大值达到了38.
Abstract
A COMS-compatible high Q-factor suspended on-chip spiral inductor used in the radio frequency front-end of radio fuze is designed and fabricated using the micro-electro-mechanical system (MEMS) surface-micromachining technology. The fabrication process of inductor is compatible with CMOS in the aspects of both thermal budget and materials. The loss factors of on-chip spiral inductor are reduced by using a suspended copper coil, and the Q-factor is significantly improved. The improved inductor model is analyzed by the electromagnetic finite element analysis software HFSS. The MEMS suspended on-chip inductor is measured. The measurement results show that the Q-factor of inductor is more than 20 in the frequency range of 1~7.6 GHz and reaches 38 at 7.4 GHz.
关键词
兵器科学与技术 /
微机电系统 /
CMOS兼容工艺 /
悬浮片上螺旋电感 /
Q值 /
无线电引信
{{custom_keyword}} /
Key words
ordnance science and technology /
micro-electro-mechanical system /
COMS-compatible process /
suspended on-chip spiral inductor /
Q-factor /
radio fuze
{{custom_keyword}} /
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
参考文献
[1] 崔占忠.引信发展若干问题[J].探测与控制学报,2008,30(2): 1-4.
CUI Zhan-zhong.Some issues on the fuze development[J].Journal of Detection & Control,2008,30(2):1-4.(in Chinese)
[2] YueC P, Wong S S. On-chip spiral inductors with patterned ground shields for Si-based RF ICs[J]. IEEE Journal of Solid-State Circuits, 1998, 33(5): 743-752.
[3] Lin Y S,Chen C Z,Liang H B,et al.High performance on-chip transformers with partial polysilicon patterned ground shields(PGS)[J].IEEE Transactions on Electron Devices.2007,54(1): 157-160.
[4] Xu X M,Li P L,Cai M,et al.Design of novel high-Q-factor multipath stacked on-chip spiral inductors[J].IEEE Transactions on Electron Devices,2012,59(8):2011-2018.
[5] 王建卫,蔡坚,窦新玉,等.陶瓷基板上的集成微电感模型与制作[J].半导体技术,2009,34(11):1074-1077.
WANG Jian-wei,CAI Jian,DOU Xin-yu,et al.Model and fabrication of integrated micro-inductors based on ceramic substrate[J].Semiconductor Technology,2009,34(11):1074-1077. (in Chinese)
[6] 赵小林,王西宁,周勇,等.双层悬空结构射频微电感制作研究[J].微纳电子技术,2005(1):30-32.
ZHAO Xiao-lin,WANG Xi-ning,ZHOU Yong,et al.Fabrication and performance of double layer suspended spiral inductor[J].Micronanoelectronic Technology,2005(1):30-32. (in Chinese)
[7] Raieszadeh M,Monajemi P,Yoon S W,et al.High-Q integrated inductors on trenched silicon island[C]∥Proceedings of the 18th IEEE International Conference on Micro Electro Mechanical Systems. Atlanta:IEEE,2005:199-202.
[8] Ozrur M,Zaghloul M E,Gaitan M.Optimization of backside micromachined CMOS inductors for RF applications[C]∥IEEE International Symposium on Circuits and Systems. Geneva:IEEE,2000:V185-V188.
[9] Lin J W,Chen C C,Cheng Y T,et al.A robust high-Q micromachined RF inductor for RFIC applications[J].IEEE Transactions on Electron Devices,2005,52(7):1489-1496.
[10] YoonJ B,Choi Y S,Kim B I,et al.CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs[J].IEEE Electron Devices Letters,2002,23(10):591-593.
[11] Yue C P,Wong S S.Physical modeling of spiral inductors on silicon[J].IEEE Transactions on Electron Devices,2000,47(3):560-568.
[12] Faraji-Deza R,Chow Y L.The current distribution and AC resistance of a microstrip structure[J].IEEE Transactions on Microwave Theory and Techniques,1990,38(9):1268-1277.
[13] Tai C M,Liao C N.Multilevel suspended thin-film inductors on silicon wafers[J].IEEE Transactions on Electron Devices,2007,54(6):1510-1514.
[14] NIE Wei-rong, XI Zhan-wen, XUE Wei-qing, et al. Study on inertial response performance of a micro electrical switch for fuze[J]. Defence Technology, 2013, 9(4): 187-192.
{{custom_fnGroup.title_cn}}
脚注
{{custom_fn.content}}