使用微波回旋共振离子源,研究Ar+离子束在不同角度、不同入射能量下对蓝宝石表面的刻蚀效果及光学性能。结果表明:所用能量800 eV,1 000 eV及1 200 eV时透过率都有很大的提升,由原来的50%提高到70%~80%,在能量为1 000 eV时增幅最大,能量为1 200 eV时增幅最小;在相同能量、不同角度下刻蚀后蓝宝石粗糙度呈先增大后减小的趋势,而在相同角度、不同能量下粗糙度方面无明显规律。刻蚀后表面形貌测试表明:角度不变,能量为1 000 eV时出现点状纳米结构,能量为1 200 eV时出现柱状纳米结构;能量不变,角度为10、50及80时出现了规律较明显的点状或条状纳米结构,角度为30时表面较为光滑。
Abstract
This dissertation aimed at the research direction of the etching result and optical property of sapphire. The microwave cyclotron resonance ion source was selected as the research instrument. The incident angle and incident energy of Ar+ ion beam were the parametric variables of the research. The research indicates that different variables can lead to different results. When the incident energy is limited to the levels of 800 eV, 1 000 eV and 1 200 eV, the transmittance achieves a big improvement from 50% to around 75%. The biggest and smallest increase of transmittance appear with the incident energy of 1000ev and 1200ev respectively. Besides, under the circumstances of same incident energy and different incident angles, the roughness of etched sapphire shows the tendency of firstly increasing and then decreasing. However, under the opposite circumstances the roughness does not show significant regularity. In addition, the surface morphology test after etching also receives different results. When the incident angle is constant and the incident energy is 1 000 eV, the point-like nanostructure turns up. Increasing the energy to 1 200 eV, the columnar nanostructure turns up. After variables are swapped, the incident energy is constant,the regular point-like nanostructure or strip-like nanostructure show up with the incident angles of 10, 50 and 80. When the incident angle is set in 30, the surface of sapphire is smooth.
关键词
透过率 /
表面粗糙度 /
纳米结构 /
低能离子束刻蚀
{{custom_keyword}} /
Key words
surface roughness /
low-energy ion beam etching /
transmittance /
nanostructure
{{custom_keyword}} /
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
参考文献
[1]Bobek T, Facsko S, Dekorsy T. Ordered quantum dot formation on GaSb surfaces during ion sputtering[J].Nuclear Instruments and Methods in Physics Research, 2001, 178: 101-104.
[2]Frost F, Ziberi B, Schindler A, et al. Ion beam assisted smoothing of optical surfaces [J]. Applied Physics Letters,2004, 78 (2): 651.
[3]Ziberi B, Frost F, Rauschenbach B. Pattern transitions on Ge surfaces during low energy ion beam erosion [J]. Applied Physics Letters, 2006, 88: 173115.
[4]Ziberi B, Frost F, Tartz M. Ripple rotation, pattern transitions,and long range ordered dots on silicon by ion beam erosion[J]. Applied Physics A, 2008, 92: 063102.
[5]Takahiro K, Ozaki K, Kawatsura K, et al. Ion induced self organized ripple patterns on graphite and diamond surfaces[J]. Appl. Surf. Sci, 2009, 5: 103.
[6]Tan S K, Liu R, Sow C H. Self organized nanodot formation on InP(100) by oxygen ion sputtering[J].Nuclear Instruments and Methods in Physics Research B, 2006, 248: 83-89.
[7]Xu Anmin. Super smooth
{{custom_fnGroup.title_cn}}
脚注
{{custom_fn.content}}