Research on Discharge Characteristics of Insulator-semiconductor Samples Based on Low-energy Electron Beam

HUO Zhisheng;PU Hongbin;YU Ningmei;LI Weiqin

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  • Sponsored by: China Association for Science and Technology (CAST)

    Editor-In-Chief: Xu Yida

    ISSN 1000-1093

    　

  • Hosted By: China Ordnance Society

    Published By: Acta Armamentarii

    CN 11-2176/TJ

Acta Armamentarii, a Chinese monthly journal, was first published in 1979. The journal is supervised by China Association for Science and Technology, sponsored by China Ordnance Society，and edited and published by Editorial Board of Acta Armamentarii. The Journal is included in all important domestic databases，and also collected by Engineering Index (EI, USA), Chemical Abstracts (CA, USA), Science Abstracts (SA, UK）, Abstract Journal (AJ, Russia), and Current Bibliography on Science and Technology(CBST).Acta Armamentarii has been selected into the journal Of Ordnance Science and Technology (Weapons Industry) Field Of High Quality Scientific and Technological Periodical Classification Catalogue (2022 edition), ranking T1, and the journal of Automotive Engineering Field of High Quality Scientific and technological Periodical classification Catalogue, ranking T2.
Acta Armamentarii ›› 2019, Vol. 40 ›› Issue (12) : 2497-2503. DOI: 10.3969/j.issn.1000-1093.2019.12.014
Paper

Research on Discharge Characteristics of Insulator-semiconductor Samples Based on Low-energy Electron Beam

  • HUO Zhisheng， PU Hongbin， YU Ningmei， LI Weiqin
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Abstract

Research on elimination of negative charging effects caused by high-energy electron beam (EB) irradiation is of great significance for the fabrication, detection and imaging of microelectronic devices. The discharge characteristics and neutralizing mechanism of insulator-semiconductor sample based on low-energy energy electron beam are studied through numerical simulation and experimental measurement. A numerical model based on electron scattering, transport and trapping is established, and the space charge, space potential distribution and discharge characteristics are investigated. The relaxation characteristics of space charges under the low-energy EB irradiation and the influences of beam energy and beam current on neutralizing characteristics are analyzed. The results show that the negativelycharged strength of sample decreases gradually after long-term placement, but it cannot be eliminated completely due to the trapping effect. Under low-energy EB irradiation lower than the second critical energy,the negative charges are neutralized quickly and the surface potential tends to zero with the accumulation of positive charges. The transient time of neutralization process is the shortest when the landing energy of EB approaches to that of maximizing the total electron yield. The larger the beam current is, the faster the transient process achieves the equilibrium.Key

Key words

insulator-semiconductor / low-energyelectronbeam / neutralizingcharacteristic / surfacepotential / dischargecharacteristic

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HUO Zhisheng， PU Hongbin， YU Ningmei， LI Weiqin. Research on Discharge Characteristics of Insulator-semiconductor Samples Based on Low-energy Electron Beam. Acta Armamentarii. 2019, 40(12): 2497-2503 https://doi.org/10.3969/j.issn.1000-1093.2019.12.014

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第40卷
第12期2019年12月兵工学报ACTA
ARMAMENTARIIVol.40No.12Dec.2019

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