The formation of deep macropore channel array of p-type silicon in HF electrolyte was inves-tigated. Then a series of electrochemical etcnmg experiments and tests were carried out in three poles electrobath using different concentration HF electrolytes. The formation mechanism of deep macropore channel array of p-type silicon was theoretically described, and the relationship between the electro?chemical etching reaction and the HF concentration was given. It is shown that that HF concentration is a very important factor that determines whether electrochemical reaction is accomplished or not. The electrochemical etching method of p-type silicon macropore array in aqueous fluoride solutions is eco?nomic and practical for fabricating deep macropores. Theexperimental consequences are benefit to the electrochemical etching technology of silicon-based deep macropore array.
Key words
electrophysics /
electrochemical etching /
macropore array /
HF /
p-type silicon
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Footnotes
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